By Norman G. Einspruch,Norman Einspruch
Comprised of 8 chapters, this quantity starts off with a normal photograph of MOS know-how improvement from the machine and processing issues of view. The severe factor of hot-carrier results is mentioned, in addition to the machine engineering features of this challenge; the rising low-temperature MOS expertise; and the matter of latchup in scaled MOS circuits. a number of gadget versions which are appropriate to be used in circuit simulators also are defined. The final bankruptcy examines novel electron shipping results saw in ultra-small MOS buildings.
This booklet may still end up worthy to semiconductor engineers taken with various features of MOS expertise improvement, in addition to for researchers during this box and scholars of the corresponding disciplines.
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Advanced MOS Device Physics: 18 (V L S I Electronics) by Norman G. Einspruch,Norman Einspruch